Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging

Single-Photon Avalanche Photodiodes (SPADs) were fabricated and characterized in 150 nm CMOS technology. The SPAD is based on a p+/nwell junction with a p-substrate guard ring. In addition, a compact gain switched quantum well (QW) laser diode with a CMOS driver was used with the proposed SPAD for time-resolved diffuse optics measurements. The measured impulse response function (IRF) of the SPADs was ∼50 ps at best. Two phantoms were measured to demonstrate the suitability of SPADs for time-resolved diffuse optics imaging (TRDOI).

Authors

Nissinen J., Nissinen I., Jahromi S., Talala T., Kostamovaara J.

Publication type

A4 Article in conference proceedings

Place of publication

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC),30-31 October 2018, Tallinn, Estonia

Published

Full citation

J. Nissinen, I. Nissinen, S. Jahromi, T. Talala and J. Kostamovaara, "Time-gated CMOS SPAD and a Quantum Well Laser Diode with a CMOS Driver for Time-Resolved Diffuse Optics Imaging," 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC), Tallinn, Estonia, 2018, pp. 1-4. doi: 10.1109/NORCHIP.2018.8573525

DOI

https://doi.org/10.1109/NORCHIP.2018.8573525

Read the publication here

http://urn.fi/urn:nbn:fi-fe201901101935