Time-Resolved Raman Spectrometer with High Fluorescence Rejection Based on a CMOS SPAD Line Sensor and a 573-nm Pulsed Laser
A time-resolved Raman spectrometer is demonstrated based on a 256 × 8 single-photon avalanche diodes fabricated in CMOS technology (CMOS SPAD) line […]
A 32 x 128 SPAD-257 TDC Receiver IC for Pulsed TOF Solid-State 3-D Imaging
A single-chip receiver for pulsed laser direct time-of-flight 3-D imaging applications has been realized in a 0.35-μm HV CMOS technology. The chip […]
Timing Skew Compensation Methods for CMOS SPAD Line Sensors Used for Raman Spectroscopy
Two methods were developed to compensate for the timing skew of CMOS SPAD line sensors used for time-resolving Raman spectroscopy. Both methods […]
An 80 x 25 pixel CMOS single-photon sensor with flexible on-chip time gating of 40 subarrays for solid-state 3-D range imaging
A CMOS solid-state 3-D range imager that uses short (~110 ps) laser pulses and a novel flexible time gating scheme for a […]
A 16×256 SPAD Line Detector With a 50-ps, 3-bit, 256-Channel Time-to-Digital Converter for Raman Spectroscopy
A 16 × 256 element single-photon avalanche diode array with a 256-channel, 3-bit on-chip time-to-digital converter (TDC) has been developed for fluorescence-suppressed […]