Ka-Band 4-Stack 45nm CMOS SOI Power Amplifier Supporting 3GPP New Radio FR2 band n258
This paper presents a fully integrated, four-stack power amplifier for millimeter-wave wireless applications, designed and fabricated using 45nm CMOS SOI technology. The […]
Ka-Band Dual Input Stacked 22 nm CMOS FDSOI Power Amplifier with Transformer-Based Power Combiner
A Ka-band dual input, three stack power amplifier (PA) is designed and fabricated using 22nm CMOS FDSOI. The PA output matching is […]
Ka-band TDD front-end with gate shunt switched cascode LNA and three-stack PA on 22nm FDSOI CMOS technology
TDD Ka-band front-end with integrated switch on 22nm FDSOI CMOS technology is implemented for 5G NR at 24–28 GHz bands. Shunt switch […]
Design of a 40 GHz low noise amplifier using multigate technique for cascode devices
Increased parasitic components in silicon-based nanometer (nm) scale active devices have various performance trade-offs between optimizing the key parameters, for example, maximum […]
Millimeter-wave frequency reconfigurable low noise amplifiers for 5G
In this brief, designs of two millimeter wave (mmWave) reconfigurable multi band low noise amplifiers (LNA) are presented targeted for fifth generation […]
Broadband Linearization Technique for mmWave Circuits
This paper presents a broadband linearization technique that can be used for mmWave amplifier circuits. It is based on the well-known principle […]
Optimizing Inductorless Static CML Frequency Dividers up to 23GHz Output Using 45nm CMOS PD-SOI
Two mmWave frequency dividers were designed, manufactured and measured using static current mode logic divider topology on 45nm CMOS PD-SOI technology. Dividers […]
A four channel phased array transmitter using an active RF phase shifter for 5G wireless systems
This paper presents a four channel phased array transmitter at 15 GHz aimed for the upcoming 5G wireless systems. The circuit is […]